PART |
Description |
Maker |
KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
TC51V16165BFT-70 |
DRAM,EDO,1MX16,CMOS,TSOP,50PIN,PLASTIC From old datasheet system
|
Toshiba.
|
KMM53232000CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM5322200C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
KMM5322104CKUG KMM5322104CKU |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
|
Samsung semiconductor
|
KMM5364005BSW |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
KMM53216000CK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM53232004CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|