| PART |
Description |
Maker |
| PH1920-90 |
Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-98 无线功率晶体90瓦，1930-1990兆赫
Wireless Power Transistor 90 Watts 1930-1990 MHz
Wireless Power Transistor 90 Watts, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| PHI920-33 PH1920-33 |
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz
Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz
|
Tyco Electronics
|
| MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| AGR19030EF |
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AGR19090E AGR19090EF AGR19090EU |
90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| 1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| MHPA19010 |
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
|
Motorola
|
| MHW1915D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived
|
Motorola
|
| PTFB192503EL PTFB192503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19 |
RF Power Field Effect Transistors
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
