| PART |
Description |
Maker |
| IS61LV25616-12T IS61LV25616-10LQ IS61LV25616-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 10 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K × 16高速异步的CMOS静态RAM.3V电源
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 15 ns, PBGA48
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 7 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel 256K X 16 STANDARD SRAM, 15 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel
|
INTEGRATED SILICON SOLUTION INC
Aeroflex, Inc.
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| IDT71256SA12PZ IDT71256SA12T IDT71256SA12TP IDT712 |
CMOS STATIC RAM 256K (32K x 8-BIT)
|
Integrated Device Technology
IDT
|
| TC554161AFTI-85L |
256K Word x 16 Bit CMOS Static RAM(256K字x 16 CMOS 静RAM) 256K字16位CMOS静态RAM56K字16位的CMOS静态RAM）的
|
Toshiba, Corp.
|
| TC55V400XB-70 TC55V400FT-85 TC55V400FT-70 |
256K Word x 16 Bit CMOS Static RAM(256K字x 16 CMOS 静RAM) 256K字16位CMOS静态RAM56K字16位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554161AFT-85V TC554161AFT-10V |
256K Word x 16 Bit CMOS Static RAM(256K字x 16 CMOS 静RAM) 256K字16位CMOS静态RAM56K字16位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| PDM41028LA10TSOITR PDM41028LA10SOITR PDM41028LA12S |
1 Megabit Static RAM 256K x 4-Bit 1兆位静RAM 256K × 4
1 Megabit Static RAM 256K x 4-Bit 1兆位静态RAM 256K × 4
|
Electronic Theatre Controls, Inc.
|
| KM616U4000C |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1041BNV33L-15VXC CY7C1041BNV33-15VXC CY7C1041B |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 Static RAM 256K × 16静态RAM
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| UPD43257BGU-85LL UPD43257BCZ-85LL UPD43257BCZ-70LL |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 256K位CMOS静态RAM 32K的词8
|
NEC Corp.
NEC, Corp.
|
| UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
