| PART |
Description |
Maker |
| 74LVC1G38GF 74LVC1G38GM 74LVC1G38GV 74LVC1G38GW 74 |
2-input NAND gate; open drain; Package: SOT891 (XSON6); Container: Tape reel smd LVC/LCX/Z SERIES, 2-INPUT NAND GATE, PDSO6
2-input NAND gate; open drain; Package: SOT353-1 (TSSOP5); Container: Reel Pack, Reverse, Reverse LVC/LCX/Z SERIES, 2-INPUT NAND GATE, PDSO5
2-input NAND gate; open drain; Package: SOT886 (XSON6); Container: Tape reel smd LVC/LCX/Z SERIES, 2-INPUT NAND GATE, PDSO6
2-input NAND gate; open drain; Package: SOT753 (SO5); Container: Tape reel smd, Reverse LVC/LCX/Z SERIES, 2-INPUT NAND GATE, PDSO5
|
NXP Semiconductors N.V.
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp.
NXP SEMICONDUCTORS
|
| DM74ALS133N 74ALS133 DM74ALS133 DM74ALS133M DM74AL |
13-Input NAND Gate ALS SERIES, 13-INPUT NAND GATE, PDIP16
13-Input NAND Gate 13输入与非
From old datasheet system
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SY100S304JC SY100S304JCTR SY100S304FC SY100S304 |
QUINT AND/NAND GATE 100S SERIES, 5 2-INPUT AND/NAND GATE, PQCC28
|
Micrel Semiconductor, Inc.
MICREL[Micrel Semiconductor]
|
| K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HCS132MS HCS132D HCS132DMSR HCS132HMSR HCS132K HCS |
NAND-Gate, 2-Input, Schmitt Trigger, Quad, Rad-Hard, High-Speed, CMOS, Logic
Radiation Hardened Quad 2-Input NAND Schmitt Trigger
RESISTOR NETWORK; THR; BUSSED; 4.7K OHM X 15 HC/UH SERIES, QUAD 2-INPUT NAND GATE, CDIP14
|
http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| 74HC20D HCT20 74HCT20 74HCT20N 74HC20N 74HC20 74HC |
Dual 4-input NAND gate HC/UH SERIES, DUAL 4-INPUT NAND GATE, PDSO14
74HC/HCT20; Dual 4-input NAND gate
Dual 4-input NAND gate 输入与非
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
