| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16）的CMOS掩模ROM分位12Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IDT7133LA IDT7133SA IDT7143LA IDT7143SA IDT7133LA5 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
2K x 16 Dual-Port RAM
HIGH SPEED 2K X 16 DUAL-PORT SRAM
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CQFP68
30V N-Channel Logic Level PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel 2K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, PQCC68
150V N-Channel UltraFET Trench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 25 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
INDUCT 22.8UH 4.9A 260KHZ KLIPMT 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高2K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
400V N-Channel MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, PQCC68
100V N-Channel Trench MOSFET 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 55 ns, PQCC68
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| KM6164002A |
256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| BS616LV4018 BS616LV4018EI BS616LV4018AC BS616LV401 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
Asynchronous 4M(256Kx16) bits Static RAM
From old datasheet system
|
Electronic Theatre Controls, Inc.
Brilliance Semiconductor
BSI
ETC[ETC]
List of Unclassifed Manufacturers
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM6208HSERIES 6208H HM6208H HM6208HJP-35 HM6208HJP |
65,536-word ′ 4-bit High Speed CMOS Static RAM
From old datasheet system
65,536-WORD ? 4-BIT HIGH SPEED CMOS STATIC RAM
|
Hitachi Semiconductor
|
| HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
| K6F4016U4G-EF70 K6F4016U4G K6F4016U4G-EF55 |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
| KM684000L KM684000LG KM684000LG-L KM684000LP KM684 |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM 512Kx8位高高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
