PART |
Description |
Maker |
KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16)的CMOS掩模ROM分位12Kx8 / 256Kx16)的CMOS掩膜光盘
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16)的CMOS掩模ROM分位512Kx8 / 256Kx16)的CMOS掩膜光盘
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016 |
256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
N04M163WL1A |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
MBM29LV400BC-70PFTN MBM29LV400BC-90PFTN MBM29LV400 |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT IC,EEPROM,FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC
|
SPANSION[SPANSION] Fujitsu
|
29F400C-55 29F400C-90 29F400C-70 |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
MX29F400CBMI-70G MX29F400CBTI-70G |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO44 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
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Macronix International Co., Ltd.
|
BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48 Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48 Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
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Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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MB84256A-70P-SK MB84256A-10P-SK MB84256A-70PFTN MB |
CMOS 256K bit Low Power SRAM CMOS 256 KBit Low Power SRAM CMOS 256K-BIT LOW POWER SRAM
|
Fujitsu Component Limited.
|
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns 4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
MAX162 MAX162ACNG MAX162ACWG MAX162AING MAX162AMRG |
Complete High-Speed CMOS, 12-Bit ADC " Complete High-Speed CMOS, 12- Bit ADC" JT 3C 3#16 PIN RECP Complete High-Speed CMOS 12-Bit ADC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP24 16-Bit Ultra-Low-Power Microcontroller, 16kB OTP, 512B RAM, 92 segment LCD 56-SSOP -40 to 85
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MAXIM - Dallas Semiconductor http:// MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
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