| PART |
Description |
Maker |
| SST89E54 |
(SST89x54 - SST89x516) Flash Flex51 MCU
|
Silicon Storage Technology
|
| SST89V51 SST89E52 |
(SST89x51 - SST89x54) Flash Flex51 MCU
|
Silicon Storage Technology
|
| AM7204-25DC AM7204-25JC AM7204-25PC AM7204-35DC AM |
70NS, VSOP, IND TEMP(FLASH) X9热卖异步FIFO
4M FIRMWARE HUB, PLCC, COM TEMP(FLASH) X9热卖异步FIFO
1M (64K X 16) 3V FLASH VSOP, COM, ROHS-A(FLASH) X9热卖异步FIFO
x9 Asynchronous FIFO X9热卖异步FIFO
WAFER(FLASH)
x9AsynchronousFIFO
|
Rochester Electronics, LLC
AMIC Technology, Corp.
TE Connectivity, Ltd.
|
| CAT28F010TRI-70T CAT28F010N-90T CAT28F010P-15 CAT2 |
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
1 Megabit CMOS Flash Memory(79.65 k) 1兆位的CMOS快闪记忆体（79.65十一
x8 Flash EEPROM x8闪存EEPROM
|
Ironwood Electronics
NXP Semiconductors N.V.
Microchip Technology, Inc.
ON SEMICONDUCTOR
|
| SST39VF3201B-70-4C-B3KE SST39VF3202B-70-4I-B3KE-T |
2M X 16 FLASH 2.7V PROM, 70 ns, PTSO48
2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
32 Mbit (x16) Multi-Purpose Flash Plus
|
Microchip Technology Inc.
SILICON STORAGE TECHNOLOGY INC
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64
256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
4M X 16 FLASH 3V PROM, 90 ns, PDSO56
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
2M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| MB84VB2000-10 MB84VB2001 MB84VB2001-10 |
PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启
x8/x16 Flash EEPROM x8/x16闪存EEPROM
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company
Atmel, Corp.
AMIC Technology, Corp.
Advanced Micro Devices, Inc.
ATMEL[ATMEL Corporation]
|
| S29GL064N90DFI040 S29GL064N90BFI033 S29GL032N90TFI |
4M X 16 FLASH 3V PROM, 90 ns, PBGA64 9 X 9 MM, LEAD FREE, FBGA-64
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
Spansion, Inc.
SPANSION LLC
|
| S29NS016J0PBJW003 S29NS064J0LBJW000 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 1M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
|
Spansion, Inc.
SPANSION LLC
|
|
