| PART |
Description |
Maker |
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| K4N26323AE-GC25 K4N26323AE-GC20 K4N26323AE-GC22 K4 |
128Mbit GDDR2 SDRAM 128Mbit GDDR2 SDRAM
4M X 32 DDR DRAM, PBGA144
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4D263238G-GC |
128Mbit GDDR SDRAM
|
Samsung Electronic
|
| M59PW1282 M59PW12821 M59PW1282-100M1T M59PW1282120 |
128Mbit (two 64Mb, x16, Uniform Block, LightFlash?? 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash) 3V Supply, Multiple Memory Product
128Mbit (two 64Mb x16 Uniform Block LightFlash) 3V Supply Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash? 3V Supply, Multiple Memory Product
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| HY27US08281A HY27US08282A HY27US16281A HY27US16282 |
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
|
Hynix Semiconductor
|
| KM48S16030AT-G_F8 KM48S16030AT-G_FH KM48S16030AT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V55C2128164VB V55C2128164VT V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
