| PART |
Description |
Maker |
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| MJE5850 MJE5850-D MJE5851 |
Power 8A 300V Discrete PNP
SWITCHMODE Series PNP Silicon Power Transistors
Power 8A 350V Discrete PNP
|
ON Semiconductor
|
| MJE371 ON2036 |
POWER TRANSISTOR PNP SILICON 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA
4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| BD678G |
Plastic Medium−Power Silicon PNP Darlingtons 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA
|
ON Semiconductor
|
| 2SB943 2SD1268 |
Silicon PNP epitaxial planar type(For power switching) 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2N6437 2N6438 2N6437-D |
POWER TRANSISTORS PNP SILICON 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA
High-Power PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| 2SA1396 2SA1396-AZ 2SA1396M 2SA1396-K-AZ |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | SOT-186 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 10A条一（c）|的SOT - 186
10 A, 100 V, PNP, Si, POWER TRANSISTOR
PNP SILICON POWER TRANSISTOR
|
NEC, Corp.
|
| 2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986
15 A, 140 V, NPN, Si, POWER TRANSISTOR
16 A, 80 V, PNP, Si, POWER TRANSISTOR
16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola
AMERICAN MICROSEMICONDUCTOR INC
|
| BD242 BD242C BD242A BD242B |
3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220
PNP SILICON POWER TRANSISTORS
|
Power Innovations International, Inc.
POINN[Power Innovations Ltd]
Power Innovations Limited
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
|
