| PART |
Description |
Maker |
| MB83512-15 |
MOS MEMORIES
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
Murata Manufacturing Co., Ltd.
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| HN29V25611ABP |
AND Flash Memories
|
Hitachi Semiconductor
|
| NAND08GAH0A NAND08GAH0AZA5E NAND08GAH0AZA5F NAND08 |
1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard垄芒 interface
1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard?/a> interface
|
Numonyx B.V
|
| AN560 |
Lowpower 3-wire non-volatile memories
|
Microchip Technology
|
| LH28F160BGH-TL LH28F160BG-TL |
16 M-bit (1 MB x 16) Smart 3 Flash Memories
|
http://
Sharp Corporation
|
| AM50DL9608G |
Simultaneous Operation Flash Memories
|
AMD
|
| CY7C43310AC |
Asynchronous first-in first-out (FIFO) buffer memories
|
CYPRESS
|
| AN1185 |
DESIGNING FOR COMPATIBILITY BETWEEN ST AND AMD FLASH MEMORIES
|
SGS Thomson Microelectronics
|
| AN1164 |
USING THE SECURITY BLOCK IN M29 SERIES FLASH MEMORIES
|
SGS Thomson Microelectronics
|
