| PART |
Description |
Maker |
| ZXTP23140BFH ZXTP23140BFHTA |
140V SOT23 PNP medium power transistor
|
Diodes Incorporated
|
| ZX5T955G ZX5T955GTA |
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
|
List of Unclassifed Man...
|
| 2N3442 |
NPN Silicon Power Transistor(10A,140V（集电极-发射极）,117W，硅NPN功率晶体
|
ON Semiconductor
|
| ECG48 ECG52 ECG36 ECG36MP ECG37MCP ECG50 ECG47 ECG |
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR
TRANSISTOR | BJT | PAIR | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 140V V(BR)CEO | 12A I(C) | TO-3VAR 晶体管|晶体管|一对|互补| 140伏特五（巴西）总裁| 12A条一（c）|VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|02
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 8A I(C) | TO-220AB
|
Electronic Theatre Controls, Inc.
Xilinx, Inc.
|
| MJH11020 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
|
Motorola, Inc
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| LT1806 LT1806CS8 LT1806IS8 1806I |
325MHz,140V/ms Rail-to-Rail Input and Output Low Distortion, Low Noise Precision Op Amp OP-AMP, 900 uV OFFSET-MAX, 290 MHz BAND WIDTH, PDSO8
325MHz,140V/ms Rail-to-Rail Input and Output Low Distortion Low Noise Precision Op Amp
From old datasheet system
|
Linear Technology, Corp.
Linear Technology Corporation
LINER[Linear Technology]
|
| HUF75823D3S HUF75823D3 FN4847 |
14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET 14 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
14A 150V 0.150 Ohm N-Channel UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits
(MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
http://
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
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