PART |
Description |
Maker |
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
HY5PS121621BFP |
VDD ,VDDQ =1.8 +/- 0.1V
|
Hynix Semiconductor
|
EM44DM0888LBA EM44DM0888LBA-187F EM44DM0888LBA-25F |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
EM47EM1688SBA-150 EM47EM1688SBA-125 |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
EM47DM0888SBA EM47DM0888SBA-125 EM47DM0888SBA-125E |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
M3764 |
VDD CONTROL ALARM SOUND
|
List of Unclassifed Manufacturers ETC SHENZHEN TIRO SEMICONDUCTOR
|
MT58L64L32F |
2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through
|
MICRON
|
BT151-650R |
SCR, 12 A, 15mA, 650 V, SOT78
|
NXP Semiconductors N.V.
|
MT8808 |
8 x 8 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
LTC1879EGN |
1.2A Synchronous Step-Down Regulator with 15mA Quiescent Current
|
http://
|
2SK3456 |
N-Channel MOSFET Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
|
TY Semicondutor TY Semiconductor Co., Ltd
|