| PART |
Description |
Maker |
| FDC9216 FDC9216B |
FLOPPY DISK DATA SEPARATOR FDDS
|
List of Unclassifed Manufacturers
ETC[ETC]
http://
|
| FDC92C36 |
Disk Data Separator/Synchronizer 磁盘数据分离同步
|
Comchip Technology Co., Ltd.
|
| AIC-6225L-30 AIC-6225-30 AIC-6225L-20 |
Disk Data Separator/Synchronizer 磁盘数据分离同步
|
Fuji Electric Holdings Co., Ltd.
|
| ISL59885 ISL59885IS-T13 ISL59885IS-T13R5218 ISL598 |
Auto-Adjusting Sync Separator for HD and SD Video SYNC SEPARATOR IC, PDSO8
|
Intersil, Corp.
Exar, Corp.
Intersil Corporation
|
| EL4511CUZ-T13 EL4511CU-T7 EL4511CUZ-T7 EL4511CU-T1 |
Super Sync Separator SYNC SEPARATOR IC, PDSO24
|
Intersil, Corp.
|
| FN7173 EL4583 EL4583CN EL4583CS EL4583CS-T13 |
Video Sync Separator, NTSC PAL SECAM, 50% Slice, S-H, Filter, Hout
Sync Separator/ 50% Slice/ S-H/ Filter/ Horizontal sync output
|
Intersil Corporation
|
| K4E661612EK4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
|
Samsung Electronic
|
| GS8170DD36C-333 GS8170DD36C-250 GS8170DD36C-300 GS |
18Mb x2Lp CMOS I/O Double Data Rate SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb 1x2Lp CMOS I/O Double Data Rate SigmaRAM 35.71x2Lp的CMOS的I / O双数据速率SigmaRAM
|
GSI Technology, Inc.
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28
64K 8K x 8 CMOS E2PROM
8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85
64K EEPROM with 64-Byte Page & Software Data Protection
64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection
From old datasheet system
64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BA6588K BA6587K |
(BA6587K / BA6588K) Read/Write Amplifier for FDD
|
Rohm
|
