PART |
Description |
Maker |
AM27S07 AM27S07A AM27S07ADC AM27S07ADCB AM27S07APC |
64-Bit Inverting-Output Bipolar RAM
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Advanced Micro Devices
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N82S10 |
(N82S11x / N82S1x) 1024-Bit Bipolar RAM
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Signetics
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M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 From old datasheet system 1048576-BIT CMOSSTATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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ASM5I2304A-1H-08-SR ASM5I2304A-2-08-ST ASM5I2304A- |
CONNECTOR ACCESSORY EMI FILTER 470PF 50V SMD 2304 SERIES, PLL BASED CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8 0.150 INCH, SOIC-8 3.3 V Zero Delay Buffer 2304 SERIES, PLL BASED CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] ON Semiconductor Alliance Semiconductor, Corp.
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
E0C33A104 |
32-Bit Single Chip Microcomputer Composed of a CMOS 32-Bit RISC core, RAM, DMA Contoller,Timers,Other Circuits(32位单片微计算机(含CMOS 32位RISC核芯,RAM,DMA控制器,定时器,其他电路
|
爱普生(中国)有限公
|
TMP90PM38 |
A System Evaluation LSI With 8-Bit CPU,One-Time PROM(32968 x 8-Bit),RAM(1024 x 8-Bit)(系统评估大规模集成电路(集成8位CPU,一次可编程ROM(32968 x 8,RAM(1024 x 8)
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Toshiba Corporation
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M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch From old datasheet system 524288-BIT CMOS STATIC RAM 524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 |
V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB ROM-less version; Internal RAM: 4K bytes 32-bit RISC single-chip microcontroller V850E/SV2 V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB 32-Bit Microprocessor Core
|
NEC[NEC]
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
82S131 N82S131A N82S130N N82S131N N82S130A N82S131 |
V(cc): 7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion 2K-bit TTL bipolar PROM 512 X 4 OTPROM, 50 ns, PDIP16
|
List of Unclassifed Manufacturers Philips Semiconductors ETC Electronic Theatre Controls, Inc. NXP Semiconductors N.V.
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M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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