| PART |
Description |
Maker |
| 2N5045 |
(2N5xxx) JFET
|
Taitron Components
|
| 2N4302 2N4139 2N4224 2N4303 2N4304 |
(2N4xxx) Low Power Field Effect Transistors
|
Solitron Devices
|
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| 2N3458 |
Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN3.6 ;; Page Number = E32+E33
|
SOLITRON
|
| RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 2SK1282-Z 2SK1282 TC-2381 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
MOS Field Effect Power Transistor
From old datasheet system
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
NEC
|
| PSD303-B-15J PSD303-B-15L PSD303-B-15M PSD303-B-15 |
Low Cost Field Programmable Microcontroller Peripherals
PSD3XX/ZPSD3XX FAMILY LOW COST MICROCONTROLLER PERIPHERALS
PSD3XX/ZPSD3XX FAMILY LOW COST MICROCONTROLLER PERIPHERALS
Low cost field programmable microcontroller peripherals, 150ns
Low cost field programmable microcontroller peripherals, 70ns
|
ST Microelectronics
SGS Thomson Microelectronics
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| PSD401A1-C-90JI PSD401A1-C-90UI PSD401A2-C-90JI PS |
Low Cost Field Programmable Microcontroller Peripherals
Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD4XX/ZPSD4XX FAMILY FIELD-PROGRAMMABLE MICROCONTROLLER PERIPHERALS
|
ST Microelectronics
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MC3371 MC3371P MC3372 MC3372D MC3371D MC3371DTB MC |
LOW POWER FM IF
LOW POWER FM IF FM, AUDIO SINGLE CHIP RECEIVER, PDIP16
(MC3372) LOW POWER FM IF
- ContinuousShort Circuit Protection ( /P-Suffix)
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
