| PART |
Description |
Maker |
| RA13H1317M RA13H1317M-E01 RA13H1317M-01 |
135-175MHz 13W 12.5V MOBILE RADIO 135 - 175MHz3W 12.5V移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57732 57732 |
144-175 MHz, 12.5V, 7W, FM PORTABLE RADIO
144-175MHZ, 12.5V,7W, FM POPHTABLE RADIO
From old datasheet system
144-175MHz 12.5V /7W /FM PORTABLE RADIO
144-175MHz 12.5V,7W,FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| M67748 M67748H 67748H |
From old datasheet system
150-175MHz, 12.5V, 7W, FM PORTABLE RADIO
150-175MHz / 12.5V / 7W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RA30H1317M RA30H1317M-01 RA30H1317M-E01 |
135-175MHz 30W 12.5V MOBILE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RA30H1317M-101 |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Sem...
|
| RA13H1317M_06 RA13H1317M RA13H1317M-101 RA13H1317M |
RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA60H1317M RA60H1317M-101 RA60H1317M11 |
RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| M67748L 67748L |
From old datasheet system
135-150MHz, 12.5V, 7W, FM PORTABLE RADIO RF POWER MODULE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LB135DS01 |
135.42MHz Low-Loss SAWF 8MHz Bandwidth 135.42MHz低损耗声表面波滤波器带宽MHz
|
SIPAT Co., Ltd.
SIPAT Co,Ltd
|
| D1005 D1005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab PLC
SEME-LAB[Seme LAB]
|
| D1028UK D1028 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽)
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
