| PART |
Description |
Maker |
| AC12FSMA AC12DSMA |
12A resin insulating TRIAC
10A resin insulating TRIAC
12A RESIN INSULATION TYPE TRIAC
|
NEC[NEC]
|
| MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| TM1261 TM1261S-R TM1241S-R TM1241 |
Triacs
TO-220F 12A Triac 20F2A可控
|
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
SANKEN ELECTRIC CO LTD
|
| TW5N04FZ TW5N04FZ3 TW5N04FZ1 TW7N04FZ2 TW7N08FZ2 T |
TRIAC|400V V(DRM)|5A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|500V V(DRM)|25A I(T)RMS|TO-103VARM6 可控硅| 500V五（DRM）的| 25A条口（T）的有效值|03VARM6
|
DB Lectro, Inc.
Intersil, Corp.
|
| T1635-600G 5576 T1650-600G |
600 V, 16 A, SNUBBERLESS TRIAC
From old datasheet system
HIGH PERFORMANCE TRIAC
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| BCR12CM-16LH-15 |
800V - 12A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| BT138-600 BT138 |
600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SemiWell Semiconductor
|
| CQ218-45B CQ218-45D CQ218-45M CQ218-45N |
Leaded Thyristor TRIAC
45 AMP TRIAC 800 V, 45 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-218
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
|
| BTA225 BTA225-500B BTA225-600B BTA225-800B BTA225B |
600 V, 25 A, SNUBBERLESS TRIAC, TO-263AB
Three quadrant triacs high commutation 500 V, 25 A, SNUBBERLESS TRIAC, TO-263
Transient Voltage Suppressor Diodes
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V
12A silicon power rectifier, 1000V
Military Silicon Power Rectifier
12A silicon power rectifier, 400V
12A silicon power rectifier, 600V
12A silicon power rectifier, 800V
|
MICROSEMI[Microsemi Corporation]
http://
|
