PART |
Description |
Maker |
IDT7280 IDT7280L IDT7280L12 IDT7280L12PA IDT7280L1 |
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9DUAL 1024 x 9 DUAL 2048 x 9DUAL 4096 x 9 DUAL 8192 x 9 CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9 DUAL 1024 x 9 CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9 CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024 x 9
|
IDT[Integrated Device Technology]
|
72V85L15PAG 72V81L15PAGI 72V81L20PAGI 72V82L15PAGI |
3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9, DUAL 1,024 x 9 DUAL 2,048 x 9, DUAL 4,096 X 9 DUAL 8,192 X 9
|
Integrated Device Technology
|
LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位(512 KB的16)SmartVoltage闪存 RES CURRENT SENSE .025 OHM 1W 1% 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
|
http:// Sharp, Corp. Sharp Corporation Sharp Electrionic Compo...
|
IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc. IDT
|
LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
|
Sharp Corporation Sharp, Corp.
|
TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五(公报)最大|的DO - 215AA
|
ITT, Corp.
|
010003 |
Packaged par tBulk part
|
List of Unclassifed Man...
|
MIC800 |
Controleur de servos de radiocommande par liasion serie
|
Electronic Theatre Controls, Inc.
|
SM5S24AHE3-2D SM5S10 SM5S10A SM5S11 SM5S11A SM5S12 |
Surface Mount PAR? Transient Voltage Suppressors
|
Vishay Siliconix
|
CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM(FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM)的
|
Cypress Semiconductor Corp.
|
S7171-0909-01 |
512 × 512 pixels, back-thinned FFT-CCD
|
Hamamatsu Corporation
|
TPSMB30 TPSMB6.8A TPSMB6.8AHE3-52T TPSMB6.8AHE3-5B |
Surface Mount PAR Transient Voltage Suppressors Surface Mount PAR Transient Voltage Suppressors
|
Vishay Siliconix http://
|