| PART |
Description |
Maker |
| C1812H122JGGACTU |
Ceramic, 200C, 200C-(CxxxxH), 1200 pF, 5%, 2,000 V, 1812, C0G, SMD, MLCC, High Temperature, Ultra-Stable, Low Loss
|
Kemet Corporation
|
| C052H103K1G5GA |
Ceramic, 200C, MoldedHighTemp, 0.01 uF, 10%, 100 V, C0G, High Temp, 200C, Radial Molded, Gold Termination, Industrial Grade, Lead Spacing = 5.08mm
|
Kemet Corporation
|
| SUM110N08-05 |
N-Channel 75-V (D-S) 200C MOSFET
|
Vishay
|
| 2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
| LT581X LT581X-15 |
200C Voltage Reference
|
Linear Technology
|
| SHD116046B SHD11604611 |
HERMETIC POWER SCHOTTKY RECTIFIER 200C Maximum Operation Temperature
|
Sensitron
|
| LT582X LT582X-15 |
200C Voltage Reference
|
Linear Technology
|
| HI4-0508A-8 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection; Temperature Range: -55°C to 125°C; Package: 20-LCC 8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20
|
Intersil, Corp.
|
| SUB75N08-10 SUP75N08-10 |
N-Channel Enhancement-Mode Trans
N-Channel 75-V (D-S), 175C MOSFET
N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET
N-Channel 75 N通道75
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
| SLA5018 |
N-channel P-channel H-bridge 5 A, 60 V, 0.3 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
|
