| PART |
Description |
Maker |
| IRGMIC50U 1950 |
600V COPACK Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system
Ultra Fast Speed IGBT
|
IRF[International Rectifier]
|
| APT40GF120JRD |
The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一
The Fast IGBT is a new generation of high voltage power IGBTs
Fast IGBT & FRED 1200V 60A
|
Advanced Power Technology, Ltd.
|
| IRG4PC30FPBF |
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| IRGMC50F 1947 |
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
From old datasheet system
|
IRF[International Rectifier]
|
| IRG4PC60F |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4PC30 IRG4PC30F IRG4PC30F-EPBF IRG4PC30FPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
31 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
Vishay Intertechnology, Inc.
International Rectifier
|
| BSM100GB120DN2 100B12N2 C67076-A2107-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| C67070-A2701-A67 050B17N2 BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BYP300 |
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
FRED-FET Diode
|
Siemens Semiconductor G...
Infineon
|
| V23990-P633-A-P1-19 |
IGBT FRED
|
Vincotech
|
