| PART |
Description |
Maker |
| AT49BV512-12JC AT49BV512-12JI AT49BV512-12PC AT49B |
512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory 64K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT28C64-25 AT28C64-20 AT28C64E-1 AT28C64E-12PI AT2 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 250 ns, PDSO28
8-Bit Shift Registers With 3-State Output Registers 16-TSSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PQCC32
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 8K X 8 EEPROM 5V, 250 ns, UUC27
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-SSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PDSO28
64K (8K X 8) CMOS E2PROM
64K 8K x 8 CMOS E2PROM
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT27BV512 AT27BV512-70TU AT27BV512-70RI AT27BV512- |
512K (64K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
ATMEL Corporation
|
| PEB2465H |
Voice Access - SICOFI4 (IOM) Single Chip CMO
|
Infineon
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| 25C02 CAT25C02 25C01 CAT25C01 25C04 CAT25C04 25C08 |
1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
1K/2K/4K/8K/16KSPISerialCMOSE2PROM
|
CatalystSemiconductor
http://
CATALYST[Catalyst Semiconductor]
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| 28LV64A-30I_P 28LV64A 28LV64A-20/SO 28LV64A-20/TS |
SENSOR, QUICK DISCONNECT WITH EUROFAST 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM(低压,64K CMOS 并行EEPROM) 64K的（8K的8）低电压的CMOS EEPROM的（低压4K的位，并行的CMOS EEPROM的）
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
