| PART |
Description |
Maker |
| AT28C64-25 AT28C64-20 AT28C64E-1 AT28C64E-12PI AT2 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 250 ns, PDSO28
8-Bit Shift Registers With 3-State Output Registers 16-TSSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PQCC32
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 8K X 8 EEPROM 5V, 250 ns, UUC27
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-SSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PDSO28
64K (8K X 8) CMOS E2PROM
64K 8K x 8 CMOS E2PROM
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| CAT28C64A CAT28C64AI-20 28C64A-20 CAT28C64A-15 CAT |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128Kx8 EEPROM
64K - BIT CMOS E2PROM
|
Atmel, Corp.
CATALYST[Catalyst Semiconductor]
|
| AT28BV64B09 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| WU400 WU100 WU101 WU102 WU103 WU104 WU105 WU106 WU |
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -12.0 VDC. Output current -400 mA. Input current 10 mA(no load), 2520 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -15.0 VDC. Output current -333 mA. Input current 10 mA(no load), 2510 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 15.0 VDC. Output current 667 mA. Input current 10 mA(no load), 2510 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 3.3 VDC. Output current 3000 mA. Input current 10 mA(no load), 2470 mA(full load).
10/15 Watts WU Series 10/15瓦吴系列
Nickel Cadmium Battery; Voltage Rating:1.2V; Battery Size Code:Sub C; Battery Capacity:2100mAh
Nickel Cadmium Battery; Voltage Rating:1.2V; Battery Size Code:Sub C; Battery Capacity:1900mAh; Battery Terminals:Pressure Contact
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 5.0 VDC. Output current 2000 mA. Input current 10 mA(no load), 2620 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 12.0 VDC. Output current 800 mA. Input current 10 mA(no load), 2520 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -5.0 VDC. Output current -1000 mA. Input current 10 mA(no load), 2620 mA(full load).
|
XPiQ
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
International Power Sources
|
| CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压（3.3V 64K的18同步高速缓冲存储器的RAM
From old datasheet system
64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit)
64K x 16 Static RAM
Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
SRAM
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT7008L20J IDT7008L20JB IDT7008L20JI IDT7008S_L I |
64K x 8 Dual-Port RAM
From old datasheet system
IC,SRAM,64KX8,CMOS,LDCC,84PIN,PLASTIC
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, CPGA84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 55 ns, PQCC84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology Inc
Integrated Device Technology, Inc.
|
