| PART |
Description |
Maker |
| CDP1822 CDP1822CD CDP1822CDX CDP1822CE CDP1822CEX |
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, PDIP22
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, CDIP22
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ADV478-15 |
CMOS 80 MHz Monolithic 256 3 24(18) Color Palette RAM-DACs
|
Analog Devices
|
| EC2720TS-110.000M |
OSCILLATORS 20PPM 0 70 2.5V 4 110.000MHZ TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 110 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| S29GL256N |
512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
|
Cypress Semiconductor
|
| LFXP2-5E-5TN144C LFXP2-5E-5TN144I LFXP2-17E-6FN484 |
FPGA, 311 MHz, PQFP144 20 X 20 MM, LEAD FREE, TQFP-144
FPGA, 357 MHz, PBGA484 23 X 23 MM, LEAD FREE, FPBGA-484
FPGA, 311 MHz, PBGA256 17 X 17 MM, FTBGA-256
FPGA, 311 MHz, PQFP208 28 X 28 MM, LEAD FREE, PLASTIC, QFP-208
FPGA, 357 MHz, PBGA256 17 X 17 MM, LEAD FREE, FTBGA-256
FPGA, 311 MHz, PBGA256 17 X 17 MM, LEAD FREE, FTBGA-256
FPGA, 357 MHz, PBGA484 23 X 23 MM, FPBGA-484
FPGA, 357 MHz, PBGA256 17 X 17 MM, FTBGA-256
FPGA, 420 MHz, PBGA484 23 X 23 MM, FPBGA-484
FPGA, 311 MHz, PBGA132 8 X 8 MM, CSBGA-132
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| R1EX24002ATAS0I R1EX24002ASAS0I |
Two-wire serial interface 2k EEPROM (256-word × 8-bit)
|
Renesas Electronics Corporation
|
| 3094-1 |
124 MHz Highpass Filter Sharp Transition to the Stopband 70 dB min at 110 MHz
|
KR Electronics, Inc.
|
| S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64
256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
4M X 16 FLASH 3V PROM, 90 ns, PDSO56
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
2M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
|
