PART |
Description |
Maker |
IS42VM32400F-75BLI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会 Integrated Silicon Solu...
|
IS42VM32400G-75BI IS42VM32400G-75BLI IS42SM32400G- |
1M x 32Bits x 4Banks Mobile Synchronous DRAM All pins are compatible with LVCMOS interface
|
Integrated Silicon Solu...
|
W9864G2IB |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
RMS132UAW-10E RMS132UAW-6E RMS132UAW-75E RMS132UAW |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Emerging Memory & Logic Solutions Inc
|
RMS132UAF-10E RMS132UAF-6E RMS132UAF-75E |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Emerging Memory & Logic Solutions Inc
|
EMLS232TA EMLS232TAW-6 EMLS232TAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM) 8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM) 4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM)的 8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM) SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation Toshiba, Corp.
|
DATADEVICECORP-DR-11525DX-415Z DR-11525DX-123S DR- |
DIGITAL TO SYNCHRO OR RESOLVER, CDIP36 DIGITAL TO SYNCHRO OR RESOLVER, CDFP36
|
DATA DEVICE CORP
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
W9812G2IB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|