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IXFH80N10 - TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-247AD Discrete MOSFETs: HiPerFET Power MOSFETS

IXFH80N10_469368.PDF Datasheet

Part No.

IXFH80N10 IXFT80N10

Description

File Size

89.68K / 2 Page

Maker

IXYS Corporation

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: IXFH80N10

Maker: IXYS

Pack: TO-247

Stock: Reserved

Unit price for :

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IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I	TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 6.5A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 23A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 21A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 20A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 500MA I(D) \| TO-250VAR TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 2.5A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 3.5A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 4.5A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 400MA I(D) \| TO-250VAR 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 18A条（丁）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-204AA 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 8A条（丁）\|04AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-220AB 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 8A条（丁）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5A I(D) \| TO-220AB 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 5A条（丁）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 33A I(D) \| TO-247 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\|3A条（丁）\|47 TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 22A I(D) \| TO-204AA 晶体管\| MOSFET的\| N沟道\| 275V五（巴西）直\| 22A条（丁）\|04AA	ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 6A I(D) \| TO-252AA TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 6A I(D) \| TO-252AA TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 6A I(D) \| TO-263AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 6A I(D) \| SOT-186 TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 6A I(D) \| TO-247VAR TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 6A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 6A I(D) \| SOT-186 TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 6A I(D) \| TO-263AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 70A I(D) \| TO-263AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 3A I(D) \| TO-252AA 晶体管\| MOSFET的\| P通道\| 60V的五（巴西）直\| 3A条（丁）\|52AA TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| TO-263AB 晶体管\| MOSFET的\| P通道\| 60V的五（巴西）直\| 30A条（丁）\|63AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 3A I(D) \| TO-263AB 晶体管\| MOSFET的\| P通道\| 60V的五（巴西）直\| 3A条（丁）\|63AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 30A I(D) \| SOT-186 晶体管\| MOSFET的\| P通道\| 30V的五（巴西）直\| 30A条（丁）\|的SOT - 186	Renesas Electronics, Corp. NXP Semiconductors N.V.
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OM6407SD OM6406SD OM6408SD OM6405SD	TRANSISTOR \| MOSFET \| ARRAY \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| FP TRANSISTOR \| MOSFET \| ARRAY \| N-CHANNEL \| 500V V(BR)DSS \| 4.5A I(D) \| FP TRANSISTOR \| MOSFET \| ARRAY \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| FP 晶体管\| MOSFET的\|阵\| N沟道\| 400V五（巴西）直\| 5.5AI（四）\|计划生育 TRANSISTOR \| MOSFET \| ARRAY \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| FP 晶体管\| MOSFET的\|阵\| N沟道\| 100V的五（巴西）直\| 8A条（丁）\|计划生育	Mitsubishi Electric, Corp.
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2N5484 2N5485 2N5486 SST5484 SST5485 SST5486	High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p	Vishay Siliconix Vishay Intertechnology,Inc.

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