PART |
Description |
Maker |
2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE General Purpose Medium Power Amplifier
|
Continental Device India Limited
|
TM10T3B-M TM10T3B-H |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TM20DA-H TM20DA-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TM55CZ-H TM55CZ-M TM55DZ-H TM55DZ-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2N6705 |
General Purpose Medium Power Amplifier
|
CDIL
|
TM60SA-6 |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TM60SZ-M |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RM30TPM-M RM30TPM-H |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TM55RZ-H TM55EZ-H TM55EZ-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM15TA-24 RM15TA-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
TM150SA-6 |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|