| PART |
Description |
Maker |
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NYG0S3EBAI4 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC58FVM5B2 TC58FVM5B3 TC58FVM5T2AFT65 TC58FVM5B2AF |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55VD1618FF-133 TC55VD1618FF-150 TC55VD1618FF-167 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55V8512FTI-15 TC55V8512JI-15 TC55V8512FTI-12 TC5 |
524,288-WORD BY 16-BIT CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4403 |
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| TPCP8002 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCF8304 |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCP8404 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)
|
Toshiba Semiconductor
|
| SSM3J325F |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??
|
Toshiba Semiconductor
|
