PART |
Description |
Maker |
IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation] ETC[ETC]
|
HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 15A条(丁)|52AA 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc MOTOROLA
|
MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
IRF6723M2DTR1P IRF6723M2DTR1PBF IRF6723M2DTRPBF IR |
15 A, 30 V, 0.0066 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Replaces Two Discrete MOSFETs
|
International Rectifier
|
IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|
IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET) HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
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