| PART |
Description |
Maker |
| HYB25D128160AT-6 HYB25D128400AT-7 HYB25D128800AT-7 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 128Mb (32Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 128Mb (16mx8) DDR266A (2-3-3)
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/ |
128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格
RESISTOR, 2M OHM, 0.063W, 1%
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD116725A8 HYMD116725A8-L |
16Mx72|2.5V|K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5DU28822ETP-H HY5DU28822ETP-J HY5DU28822ETP-M HY |
DDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| V58C2128164S V58C2128804SXT8 V58C2128404SXT8 V58C2 |
HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
High performance 2.5V 128MB DDR SDRAM
|
Mosel Vitelic Corp
|
| K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
| WED3EG72M18S403JD3MG WED3EG7218S-JD3 WED3EG72M18S4 |
128MB - 16Mx72 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| NT5DS32M4AT |
(NT5DS16M8AT / NT5DS32M4AT) 128Mb DDR SDRAM
|
Nanya Techology
|
