| PART |
Description |
Maker |
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| AM90CL255-08JC AM90CL255-15JC AM90CL255-12PC |
256K X 1 NIBBLE MODE DRAM, 80 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 150 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 120 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
| KM44C258BJ-8 KM44C258BP-8 KM44C258BP-7 KM44C258BZ- |
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 70 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 80 ns, PZIP19
|
|
| MCM40256 MCM40256S10 MCM40256S70 MCM40256S80 MCM40 |
256K x 40 Bit Dynamic Random Access Memory Module 256K X 40 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| UPD42S4263AG5-80 UPD42S4263AV-70 UPD42S4263ALE-60 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40
256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
|
|
| MSM41256A-15JS MSM41256A-10JS |
256K X 1 PAGE MODE DRAM, 150 ns, PQCC18
256K X 1 PAGE MODE DRAM, 100 ns, PQCC18
|
OKI ELECTRIC INDUSTRY CO LTD
|
| HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
256k x 16 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IS41C16257 IS41C16257-35K IS41C16257-35KI IS41C162 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu...
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| AS4C1259883C |
256K x 1 DRAM
|
AUSTIN[Austin Semiconductor]
|
