| PART |
Description |
Maker |
| SUD50P06-15L |
P-Channel, Tj = 175 °C power MOSFET; low leakage current; P通道，Tj=175℃，低漏电流
P-Channel 60-V (D-S), 175C MOSFET
P-Channel 60-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SUD50N02-06P |
N-Channel MOSFET, 20 V(D-S) , 175°C
N-Channel MOSFET, 20 V(D-S) , 175°C N沟道MOSFET0V（D-S），175
From old datasheet system
N-Channel 20-V (D-S) 175?MOSFET
N-Channel 20-V (D-S) 175掳 MOSFET
N-Channel 20-V (D-S) 175?MOSFET
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| FDG1024NZ |
Dual N-Channel PowerTrench? MOSFET 20 V, 1.2 A, 175 mΩ
Dual N-Channel PowerTrench垄莽 MOSFET 20 V, 1.2 A, 175 m楼?
|
Fairchild Semiconductor
|
| SUD50N02-11P |
N-Channel 20-V (D-S) 175C MOSFET
N-Channel 20-V (D-S) 175∩ MOSFET
N-Channel 20-V (D-S) 175隆? MOSFET
N-Channel 20-V (D-S) 175?/a> MOSFET
|
Vishay Siliconix
|
| SUD10P06-280L SUU10P06-280L |
P-Channel 60-V (D-S), 175C MOSFET, Logic Level P通道60 -五（副）75 MOSFET的逻辑电平
P-Channel 60-V (D-S), 175 grades C MOSFET, Logic Level
P-Channel 60-V (D-S), 175C MOSFET, Logic Level
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUB70N06-14 SUP70N06-14 |
N-Channel Enhancement-Mode Trans
N-Channel 60-V (D-S), 175 Degree Celcious MOSFET
|
Vishay Intertechnology,Inc.
|
| SUM110N04-05H |
N-Channel 40-V (D-S) 175°C MOSFET
N-Channel 40-V (D-S) 175掳C MOSFET
N-Channel 40-V (D-S) 175∑C MOSFET
|
VISAY[Vishay Siliconix]
|
| SUD50N04-25P |
N-Channel 40-V (D-S) 175°C MOSFET
N-Channel 40-V (D-S) 175∑C MOSFET
|
Vishay Siliconix
|
