PART |
Description |
Maker |
TC55V1403J-20 TC55V1403FT-15 TC55V1403FT-20 TC55V1 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TC5517CFL-20 TC5517CP-15 TC5517CF-15 TC5517CF-20 T |
2.048 WORD X 8 BIT CMOS STATIC RAM
|
Toshiba Corporation Toshiba Semiconductor
|
M6MGB_T160S2BVP M6MGB E99003_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi
|
MSM27C1602CZ |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM 1,048,576字16位或2097152字8位一次性可编程
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
TC55VD1618FFI-133 TC55VD1618FFI-150 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
MR27V1652D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
AK5321024BW |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory 1,048,576 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
TC55V16176FF-133 TC55V16176FF-167 TC55V16176FF-150 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
|
TOSHIBA
|
TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|