| PART |
Description |
Maker |
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| STGW39NC60VD07 STGW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH⑩ IGBT
|
STMicroelectronics
|
| 2SK2740 K2740 |
Switching (600V, 7A)
|
ROHM[Rohm]
|
| 1N4723-1 |
Diode Switching 600V 3A 2-Pin TOP HAT
|
New Jersey Semiconductor
|
| MUR1660CT |
Diode Switching 600V 8A 3-Pin(3 Tab) TO-220AB
|
New Jersey Semiconductors
|
| RJK6025DPE RJK6025DPE-00J3 RJK6025DPE12 |
600V - 0.8A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F7BDPQ-A0 |
600V - 50A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6025DPD |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6036DP3-A0 RJK6036DP3-A0J2 RJK6036DP3-A0-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F5DPK-15 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
