| PART |
Description |
Maker |
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SC752GTM |
Ultra High Speed Switching Applications Computer Counter Applications
|
TOSHIBA
|
| 1N4150 1N4151 |
High-speed diodes 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
High-speed diodes 0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35
High-speed diodes"
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SC3437 |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications
|
TOSHIBA
|
| 2SC752GTM 2SC752TM |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications
From old datasheet system
|
Toshiba Semiconductor
|
| JANS1N6641US 1N6639US 1N6640US 1N6641US JAN1N6639U |
Signal or Computer Diode
SWITCHING DIODES
|
MICROSEMI[Microsemi Corporation]
|
| 1N6641 1N6639 1N6639_1 1N6640 JAN1N6640 JAN1N6641 |
Signal or Computer Diode
SWITCHING DIODES
|
MICROSEMI[Microsemi Corporation]
|
| BAW56T BAW56W BAV756S NXPSEMICONDUCTORS-BAW56S115 |
High-speed switching diodes
|
NXP Semiconductors
|
| 1N4448 1N4148113 1N4148-1N4448-15 |
High-speed diodes 高速二极管
|
NXP Semiconductors N.V.
|
| 1SS422 |
High Speed SWITCHING Diodes
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| BAW75 BAW76 |
HIGH SPEED SWITCHING DIODES
|
SynSemi, Inc.
|
| MMDL914 |
High Speed Switching Diodes
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
