| PART |
Description |
Maker |
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| KGF1608 |
Power FET (Ceramic Package Type)
|
OKI electronic componets
|
| MGF1952A |
Microwave Power MES FET (Leadless Ceramic Package)
|
Mitsubishi Electric Semiconductor
|
| KGF1321S |
Power FET (Ceramic Package Type)
From old datasheet system
|
OKI
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| BAS116 |
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us
|
TY Semiconductor Co., Ltd
|
| IP78M12A-LCC4 IP78M12-LCC4 IP78M15A-LCC4 IP78M15-L |
0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,5V绋冲????剁?琛ㄨ创灏??))
Voltage Regulator 电压调节
0.5 AMP POSITIVE VOLTAGE REGULATOR IN A CERAMIC SURFACE MOUNT PACKAGE 15 V FIXED POSITIVE REGULATOR, CQCC18
0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,15V稳压陶瓷表贴封装)) 0.5安培正电压稳压器在陶瓷表面贴装封装（0.5甲，15V的稳压器（陶瓷表贴封装）
0.5 AMP POSITIVE VOLTAGE REGULATOR IN A CERAMIC SURFACE MOUNT PACKAGE 5 V FIXED POSITIVE REGULATOR, CQCC18
Power Resistor; Series:TWW; Resistance:15ohm; Resistance Tolerance: /- 5 %; Power Rating:5W; Voltage Rating:350V; Temperature Coefficient:400ppm/ C
0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,12V稳压陶瓷表贴封装))
0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,5V稳压陶瓷表贴封装))
0.5 AMP Positive Voltage Regulator In Ceramic Surface Mount Package(0.5 A ,12V绋冲????剁?琛ㄨ创灏??))
|
Honeywell International, Inc.
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
SEMELAB LTD
|
| CAT28C64BHP-20 CAT28C64BHN-15 CAT28C64BHT-20 CAT28 |
PROFET - Smart High Side Switches
XWAY™ ADM6993
RF Switches; Package: PG-TSLP-7; P-0.1dB(min): 21.0 dBm; Switching Time(max): 4.0 µs; Isolation @1GHz: 32.0 dB; Insertion Loss @1GHz: 0.4 dB; Pmax: 21.0 dBm
HITFET, TEMPFET - Smart Low-Side Switches
IGBT Modules up to 1200V SixPACK; Package: AG-EASY2B-1; IC (max): 50.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EasyPACK 2B;
IGBT Modules up to 6500V Single; Package: A-IHV130-3; IC (max): 400.0 A; VCE(sat) (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
Single: N-Channel 600V MOSFETs; Package: PG-TO262-3; Technology: CoolMOS™; VDS (max): 600.0 V; RDS (on) (max) (@10V): 105.0 mOhm; ID (max): 31.0 A; RthJC (max): 0.5 K/W;
XWAY™ ADM5120P
Medium Power IF max = 500mA; Package: PG-SOT363-6; Configuration: Single; VR (max): 30.0 V; IF (max): 2,000.0 mA; CT (max): 60.0 pF; VF (max): 600.0 mV;
X-GOLD™213 - PMB8810
UMTS LNA; Package: PG-TSLP-16; Frequency Hz: 800 MHz 1900 MHz 2100 MHz; Gain (typ): 15.2 dB 16.5 dB 16.5 dB; F (typ): 1.2 dB 1.0 dB 1.1 dB; P-1dB (in): -12 -10 -11; I (typ): 3.5 mA 3.4 mA 3.5 mA;
SPOC - SPI Power Controller for Advanced Light Control; Package: PG-DSO-36; Channels: 5.0; LED mode: No; Cranking mode: No; Watchdog: No; Over Voltage Protection: 41.0 V
IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 75.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK™ 2;
128Kx8 EEPROM 128Kx8 EEPROM
ADM3120BX x8的EEPROM
IGBT Modules up to 6500V Single; Package: A-IHV130-3; I<sub>C </sub>(max): 400.0 A; V<sub>CE(sat)</sub> (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
|
Honeywell International, Inc.
NXP Semiconductors N.V.
Infineon Technologies AG
Amphenol, Corp.
Vectron International, Inc.
Advanced Analogic Technologies, Inc.
|
| STF20N65M5 STFI20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in TO-220FP package
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
