| PART |
Description |
Maker |
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH460 |
GaAlAs-Lumineszenzdiode
|
OSRAM GmbH
|
| Q65110A2742 SFH7222 SFH722212 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und grüne GaP-LED (565 nm)
|
OSRAM GmbH
|
| XDMR14C4-A |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 8000 Iv(ucd) If@10mA Typ.= 23990
|
SunLED Company Limited
|
| XDMR09C3 |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 8000 Iv(ucd) If@10mA Typ.= 11590
|
SunLED Company Limited
|
| XDMR08C |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 4700 Iv(ucd) If@10mA Typ.= 15990
|
SunLED Company Limited
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 127141H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 127141 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 124141L |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 115280 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 136274 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
