PART |
Description |
Maker |
WEDPN16M64VR-B100B2C WEDPN16M64VR-B100B2M WEDPN16M |
16MX64 REGISTERED SYNCHRONOUS DRAM
|
White Electronic Designs Corporation
|
HSD16M64B8W-10 HSD16M64B8W-10L HSD16M64B8W-12 HSD1 |
Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44 16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44 Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50 DB25PH 16兆位同步DRAM 16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group SIEMENS AG
|
HYM71V16635HCLT8P-H HYM71V16635HCLT8P-K HYM71V1663 |
SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC 内存| 16MX64 |的CMOS |内存| 168线|塑料 16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG SMSC, Corp.
|
M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 SDRAM - 16Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
M12S64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
M52D16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
|
Elite Semiconductor Memory Technology, Inc.
|