| PART |
Description |
Maker |
| WSF512K32-XXX WSF512K32-29H2C WSF512K32-29H2CA WSF |
512KX32 SRAM / FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WS512K32-85G2TI WS512K32-100G2TI WS512K32-85G2TC W |
512Kx32 SRAM MODULE, SMD 5962-94611
|
WEDC[White Electronic Designs Corporation]
|
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| WS512K32BV-XXXE |
512Kx32 3.3V SRAM MODULE
|
White Electronic Design...
|
| PUMA2S16000M-025 PUMA77S16000M-020 PUMA2S16000I-02 |
15NS, 68 PLCC, IND TEMP(EPLD)
SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC
15NS, 68 PLCC, COM TEMP(EPLD)
SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC
20NS, 44 PLCC, IND TEMP(EPLD)
30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA)
15NS, TQFP, COM TEMP, ROHS-A(EPLD)
20NS, 44 TQFP, COM TEMP(EPLD)
7NS, 44 TQFP, COM TEMP, GREEN(EPLD)
30MHZ, 3.3V, 20 PLCC, IND TEMP(FPGA) 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
|
Intel, Corp.
|
| EDI7F33512C |
512Kx32 Flash(512Kx32 闪速存储器)
|
White Electronic Designs Corporation
|
| EDI8F32512C EDI8F32512C20MMC-G EDI8F32512C25MMC-G |
512Kx32 Static RAM CMOS, High Speed Module
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| ACT-SF512K32N-39F2C ACT-SF512K32N-37F2T ACT-SF512K |
ACT-SF512K32 High Speed 512Kx32 SRAM / 512Kx32 Flash Multichip Module 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
Hex D-Type Flip-Flops With Clear 16-SOIC 0 to 70 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
4-Bit D-type Registers with 3-State Outputs 16-SOIC 0 to 70 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
Hex D-Type Flip-Flops With Clear 16-PDIP 0 to 70
4-Bit D-type Registers with 3-State Outputs 16-SO 0 to 70
4-Bit D-type Registers with 3-State Outputs 16-PDIP 0 to 70
Quadruple D-Type Flip-Flops With Clear 16-SOIC 0 to 70
Hex D-Type Flip-Flops With Clear 16-SO 0 to 70
|
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
|
| DS1345YL-70-IND DS1345YP-70IND DS1345ABP-70IND |
128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 LOW PROFILE, SMT-34
1024k Nonvolatile SRAM with Battery Monitor 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
|
Maxim Integrated Products, Inc.
|
| CYM9262A CYM9261B 9260 |
256K x 72 SRAM Module
128K x 72 SRAM Module
From old datasheet system
|
Cypress
|
| AS8S512K32AQ1-25L_Q AS8S512K32P-17L/IT AS8S512K32P |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 PGA-66
512K x 32 SRAM SRAM MEMORY ARRAY
|
Micross Components
Austin Semiconductor
|
| EDI7F33512V EDI7F433512V |
512Kx32 Flash(512Kx32 闪速存储器)
4x512Kx32 Flash(4x512Kx32 ???瀛???ī
|
White Electronic Designs Corporation
|
