| PART |
Description |
Maker |
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW624B IRFI624B IRFW624BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW624A
250V N-Channel MOSFET 4.1 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQI9N25 FQB9N25 FQB9N25TM |
250V N-Channel QFET
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOSFET) 9.4 A, 250 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQI6N25 FQB6N25 FQB6N25TM |
250V N-Channel QFET
250V N-Channel MOSFET 5.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF644B IRFS644B IRF644 IRF644BFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRF644 & IRF644A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI634G ORFO634G |
POWER MOSFET 功率MOSFET
Power MOSFET(Vdss=250V / Rds(on)=0.45ohm / Id=5.6A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRC634 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
|
IRF[International Rectifier]
|
| IRFR234B IRFU234B IRFU234BTUFP001 |
250V N-Channel B-FET / Substitute of IRFU234A
250V N-CHANNEL MOSFET
|
Fairchild Semiconductor
|
| IRFI624G |
Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.4A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| FQT2P25 FQT2P25TF |
250V P-Channel QFET
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
