PART |
Description |
Maker |
EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM 256Mb (2MBank2) Synchronous DRAM 256Mb的(200万?4Bank2)同步DRAM 256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT 128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http:// NEC[NEC] NEC Corp. Performance Semiconductor, Corp.
|
MC-4R128CPE6C-845 MC-4R128CPE6C MC-4R128CPE6C-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184 Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
Performance Semiconductor, Corp. NEC Corp. NEC[NEC]
|
K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
CP20251 |
PELTIER MODU LE
|
CUI INC
|
CP40136 |
PELTIER MODU LE
|
CUI INC
|
CP60233 |
PELTIER MODU LE
|
CUI INC
|
KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2 From old datasheet system 1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
MR18R326GAG0-CT9 MR18R326GAG0-CM8 MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V 2Mx186个RIMM的模块基76Mb阿芯片,32秒银行,32K/32ms参考,.5V (32Mx18) 16pcs RIMM Module based on 576Mb A-die 32s banks32K/32ms Ref 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
281423-1 |
.156 Inch Centerline-Cable to Board AMPMODU .031 x .062 Interconnection System (Mod I); MODU I REC. ( AMP )
|
Tyco Electronics
|