Part Number Hot Search : 
830APIN MC33202P UN222 MAX44 00500 A1313 LT1679CS MC6823
Product Description
Full Text Search

MRF19120S - RF POWER FIELD EFFECT TRANSISTORS

MRF19120S_499180.PDF Datasheet

 
Part No. MRF19120S MRF19120
Description RF POWER FIELD EFFECT TRANSISTORS

File Size 343.87K  /  12 Page  

Maker

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF19120
Maker: N/A
Pack: N/A
Stock: 86
Unit price for :
    50: $69.05
  100: $65.59
1000: $62.14

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MRF19120S MRF19120 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF19120S MRF19120 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF19120S ]

[ Price & Availability of MRF19120S by FindChips.com ]

 Full text search : RF POWER FIELD EFFECT TRANSISTORS
 Product Description search : RF POWER FIELD EFFECT TRANSISTORS


 Related Part Number
PART Description Maker
MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
NDP6020P NDB6020P P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
SSM3J01T Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
SSM3J02F 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
PTF181301 PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
INFINEON[Infineon Technologies AG]
T491D226K025AT T491D476K016AT EMVY630GTR331MMH0S 2 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
Freescale Semiconductor...
MAPL-000817-015CPC RF Power Field Effect Transistor
Tyco Electronics
MRF6S21050LR3 MRF6S21050LSR3 RF Power Field Effect Transistors
Freescale (Motorola)
Freescale Semiconductor, Inc
MRF141 RF FIELD-EFFECT POWER TRANSISTOR
Advanced Semiconductor
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
 
 Related keyword From Full Text Search System
MRF19120S national MRF19120S search MRF19120S sensor MRF19120S LPE model MRF19120S IC在线
MRF19120S Ic-on-line MRF19120S Derating Rule MRF19120S reserved MRF19120S asynchronous MRF19120S gate
 

 

Price & Availability of MRF19120S

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.96289014816284