| PART |
Description |
Maker |
| 1SV245 |
Variable Capacitance Diode (UHF SHF Tuning)
|
TY Semicondutor
|
| KDV287E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC(Korea Electronics)
|
| MT4S104T |
UHF-SHF Low Noise Amplifier Application
|
Toshiba Semiconductor
|
| 2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BB555 Q62702-B0864 Q62702-B0853 |
From old datasheet system
Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BBY52-03W BBY5203W Q62702-B664 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 4.60 inch width x 2.37 inch depth, Black Textured Finish
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| KDV149 KDV149B KDV149C KDV149D |
Silicon diode for AM radio band tuning applications
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(AM RADIO BAND TUNING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
