PART |
Description |
Maker |
HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
2SC732TM E001075 |
From old datasheet system NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Mitsubishi Electric Semiconductor Toshiba Semiconductor
|
2SC466607 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications
|
Toshiba Semiconductor
|
HN1B04FU E001969 |
From old datasheet system NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
2SC4738 E000984 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor
|
HN2C01FU E001987 |
From old datasheet system NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
HN1B01FU |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
2SC332407 2SC3324 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications
|
TOSHIBA
|
HN1B01FU07 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|