| PART |
Description |
Maker |
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| FPD1500-000 FPD1500-000SQ FPD1500-000S3 |
1W POWER pHEMT
|
RF Micro Devices
|
| LP1500 |
1W POWER PHEMT
|
Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
|
| HMC7229LS6 |
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz
|
Hittite Microwave Corporation
|
| HMC949 |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz
|
Hittite Microwave Corporation
|
| HMC965LP5E HMC965LP5E11 |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
|
Hittite Microwave Corporation
|
| LP6872P100-3 LP6872P100 LP6872P100-1 LP6872P100-2 |
Packaged 0.5W Power PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| LP3000P100 |
PACKAGED 2W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD6836 |
0.25W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
