PART |
Description |
Maker |
CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
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Continental Device India Limited
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STK433-130-E |
Thick-Film Hybrid IC 2-channel class AB audio power IC 150W 150W
|
Sanyo Semicon Device
|
STK412-150 |
Two-Channel Shift Power Supply Audio Power Amplifier ICs 150W 150W
|
Sanyo
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93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM 2K 5.0V Automotive Temperature Microwire Serial EEPROM Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
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Microchip Technology Inc.
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CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP 2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ 2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q 2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P 2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
ASI10749 VMB80-28S VHB25-12S |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V))
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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BCP51 BCP53 BCP52-10 BCP53-10 BCP53-16 BCP51-10 BC |
PNP Silicon AF Transistors General Purpose Transistors - SOT223; VCEO=45V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=60V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=80V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=45V; hFE=40..250 General Purpose Transistors - SOT223; VCEO=45V; hFE=100..250 General Purpose Transistors - SOT223; VCEO=60V; hFE=100..250 General Purpose Transistors - SOT223; VCEO=80V; hFE=100..250
|
Infineon Technologies A... Infineon Technologies AG
|
HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
|
CN301 CN304 CN300 CN302 CN303 |
0.300W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, A Ic, 50 - 300 hFE 0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 20 - hFE 0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 50 - 300 hFE 0.300W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, A Ic, 50 - 300 hFE NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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CDIL[Continental Device India Limited] Continental Device Indi...
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ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262 15A, 600V Stealth Diode 15A/ 600V Stealth Diode 15A, 600V Stealth⑩ Diode 15A, 600V Stealth Single Diode
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2N4030 2N4031 2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE.
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Continental Device India Limited
|
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