| PART |
Description |
Maker |
| GS8170LW36C-250 GS8170LW72C-200 GS8170LW72C-300 GS |
Low-Noise Operational Amplifier 8-SOIC -40 to 85
18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM
Low-Noise Operational Amplifier 8-PDIP -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
Low-Noise Operational Amplifier 8-SO -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
|
Electronic Theatre Controls, Inc.
|
| 2SK117 E001317 |
From old datasheet system
LOW NOISE AUDIO AMPLIFIER APPLICATONS
N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| EL5134 EL5135 EL5235IS-T7 EL5235IS-T13 EL5235IS EL |
Single, 630MHz Low Noise Amplifier with Enable
Dual, 630MHz, Low Noise Amplifier with Enable
From old datasheet system
630MHz Gain of 5 Low Noise Amplifiers
630MHz, Gain of 5, Low Noise Amplifiers
|
INTERSIL[Intersil Corporation]
|
| MAX2650 MAX2650EUS-T |
DC-to-Microwave / 5V Low-Noise Amplifier
DC-to-Microwave, 5V Low-Noise Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125
Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|
| KTC3880 KTC3911 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER) 外延平面NPN晶体管（高频低噪声放大器，甚高频波段放大器）
EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)
|
KEC Holdings
KEC(Korea Electronics)
|
| TGA4600-EPU |
60 GHz Low-Noise Amplifier
60GHz Low Noise Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| AA038N1-99 |
261 GHz Low Noise Amplifier
26-41 GHz Low Noise Amplifier
GT 4C 4#4 PIN PLUG
|
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| 2SC9014 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
PRE-AMPLIFIER/ LOW LEVEL & LOW NOISE
Transistors
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
USHA India LTD
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| L1935 |
Low Noise Amplifier 1800-1950 MHz, 35 dB Gain, 0.9dB Noise Figure
|
PDI[PREMIER DEVICES, INC.]
|
