PART |
Description |
Maker |
K4S511533F-YF |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
K4M641633K |
1M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
K4S511533F K4S511533F-YC K4S511533F-F1H K4S511533F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F- |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行54FBGA移动SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4M51163LENBSP K4M51163LE K4M51163LE-F K4M51163LE- |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M64163PK K4M64163PK-BE75 K4M64163PK-RE75 K4M6416 |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
|
SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
HY57V561620CLT-6 HY57V561620CLT-8 HY57V561620CLT-K |
4 BANKS X 4M X 16BIT SYNCHRONOUS DRAM
|
Hynix Semiconductor
|
IC42S16400A-7BIG IC42S16400A-6BG IC42S16400A-6BIG |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM 100万16 × 4银行4兆位)内
|
Elpida Memory, Inc. Integrated Circuit Solu...
|
K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY57V56162 HY57V561620CT HY57V561620CT-H |
4 Banks x 4M x 16Bit Synchronous DRAM 16Mx16|3.3V|8K|6/K/H/8/P/S|SDRSDRAM-256M
|
HYNIX
|
K4S161622E-TC/I/E |
512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|