| PART |
Description |
Maker |
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| 2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Medium Power Transistor (-50V, -1A)
|
ROHM
|
| SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
|
TOSHIBA[Toshiba Semiconductor]
|
| SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Transceiver
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
中功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏，1安PNP型中等功率晶体管
Si, POWER TRANSISTOR
45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
| CR12CM-12A CR12CM-12A-A8 CR12CM-12A-13 CR12CM-12A- |
Thyristor Medium Power Use
600V - 12A - Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
| 2SB1189 2SB1238 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Medium power transistor
|
Rohm
|
| LMA443 |
31GHz Medium Power Amplifier
31 GHz Medium Power Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| SG2823 SG2823J_DESC SG2823L_DESC SG2823N SG2803J S |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
POWERQUICC II HIP4 REV B
From old datasheet system
Driver - Medium Current Array
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
