| PART |
Description |
Maker |
| A0837 BC876 |
PNP Silicon Darlington Transistors (High current gain High collector current)
From old datasheet system
|
Siemens
Infineon
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2N6033 |
HIGH-CURRENT, HIGH-SPEED, HIGH-POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N1651 2N1652 2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
New Jersey Semi-Conductor Products, Inc.
|
| FZT953 |
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
|
ZETEX
|
| BUW49 BUW48 4206 |
HIGH CURRENT NPN SILICON TRANSISTORS
HIGH POWER NPN SILICON TRANSISTORS
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| BC637 BC639-16ZL1G BC639G BC639RL1G |
High Current Transistors
|
Rectron Semiconductor
|
| NTE2566 NTE2567 |
Silicon Complementary Transistors High Current, High Speed Switch
Silicon Complementary Transistors High Current High Speed Switch
|
NTE[NTE Electronics]
|
| 2N6702 2N6703 2N6704 |
High-current silicon N-P-N VERSAWATT transistor.
High-Current silicon NPN Versawatt Transistors
|
General Electric Solid State
ETC
List of Unclassifed Manufacturers
|
| BC635-D |
High Current Transistors NPN Silicon
|
ON Semiconductor
|
| MPS6651 MPS6652 |
COMPLEMENTARY HIGH CURRENT AMPLIFIER TRANSISTORS
|
Central Semiconductor C...
|
| MJ1101201 MJ11016 MJ11012 MJ11015 MJ11012-D |
HIGH-CURRENT COMPLEMENTARY SILICON TRANSISTORS
|
ONSEMI[ON Semiconductor]
|
