PART |
Description |
Maker |
GP800NSM33 |
Hi-Reliability Single Switch IGBT Module Preliminary Information 800 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT 12 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PM1200HCE330-1 |
1200 A, 3300 V, N-CHANNEL IGBT INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
GP801DCM18 |
B Series/ Female Solder 800 A, 1800 V, N-CHANNEL IGBT Hi-Reliability Chopper Switch Low VCESAT IGBT Module
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp. MICROSEMI POWER PRODUCTS GROUP
|
MGSF3441V |
3300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON SEMICONDUCTOR
|
STB18NM80 STF18NM80 STP18NM80 STW18NM80 |
N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
|
STMicroelectronics
|
TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7 800 A, 2000 V, SCR MODULE-7 800 A, 2200 V, SCR MODULE-7 150 A, 800 V, SCR 900 A, 800 V, SCR 900 A, 600 V, SCR 800 A, 800 V, SCR 120 A, 1600 V, SCR
|
Infineon Technologies AG
|
MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
FID35-06C IXYSCORP-FID35-06C |
Fast IGBT Chopper in ISOPLUS i4-PACTM 38 A, 600 V, N-CHANNEL IGBT IGBT Discretes
|
IXYS, Corp. IXYS[IXYS Corporation]
|
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